Page de Garde

Epitaxy of semiconductor layered structures

Type doc. :

Livre

Langue :

Anglais

Auteur(s) :

Tung, R. T.
Dawson, L. R.
Gunshor, R. L.

Editeur(s) :

Materials Research society

Année d'édition :

1988

Sujet(s):
semiconductor epitaxy
crystal growth

Thème :

Electronique

ISBN :

0931837707
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This volume contains the proceedings of the mrs symposium on epitaxy of semiconductor layered structures, held in boston, massachusetts, in late 1987. it presents research on the growth, characterization, and application of epitaxial semiconductor layers, which were becoming increasingly important for high-speed electronics, optoelectronics, quantum structures, and advanced integrated circuits. the book focuses on techniques for producing atomically controlled semiconductor films and multilayers, including molecular beam epitaxy (MBE), metal-organic chemical vapor deposition (MOCVD), selective epitaxy, strained-layer growth, and heterostructure engineering. these technologies formed the foundation of many modern semiconductor devices.

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N° Bulletin Date / Année de parution Titre N° Spécial Sommaire
N° d'Exemplaire / inventaire Cote Localisation Type de Support Type de Prêt Statut Date de Restitution Prévue Réservation
111513A92 621.381 TUN 1 C1 BIB-Centrale / Ouvrages Papier interne disponible
Tung, R. et al. (1988). Epitaxy of semiconductor layered structures . Materials Research society;