Page de Garde

Impurity diffusion and gettering in silicon

Type doc. :

Livre

Langue :

Anglais

Auteur(s) :

Fair, Richard B.
Pearce, Charles W.
Washburn, Jack

Editeur(s) :

Materials Research society

Année d'édition :

1985

Sujet(s):
impurity diffusion
semiconductor processing

Thème :

Electronique

ISBN :

0931837014
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This volume is a comprehensive collection of research papers devoted to the diffusion of impurities and gettering processes in silicon, two subjects that were critically important to the advancement of integrated-circuit technology during the 1980s. the proceedings examine the fundamental mechanisms controlling the movement of dopants and metallic contaminants in silicon and the methods used to remove or immobilize those impurities to improve semiconductor device performance. the book brings together leading researchers in semiconductor physics, materials science, and microelectronics manufacturing. it addresses both theoretical and experimental aspects of impurity behavior, including diffusion mechanisms, point defects, precipitation phenomena, and intrinsic and extrinsic gettering techniques.

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N° Bulletin Date / Année de parution Titre N° Spécial Sommaire
N° d'Exemplaire / inventaire Cote Localisation Type de Support Type de Prêt Statut Date de Restitution Prévue Réservation
111539A92 621.381 FAI 1 C1 BIB-Centrale / Ouvrages Papier interne disponible
Fair, R. et al. (1985). Impurity diffusion and gettering in silicon . Materials Research society;