Page de Garde

Point defects in semiconductors V 2,experimental aspects

Type doc. :

Livre

Langue :

Anglais

Auteur(s) :

Bourgoin, Jacques
Lannoo, Michel
Watkins, George D

Editeur(s) :

Heidelberg

Année d'édition :

1983

Sujet(s):
point defects
semiconductors

Thème :

Physique

ISBN :

0387115153
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This volume provides a detailed examination of the experimental methods used to investigate point defects in semiconductors. It covers various techniques such as spectroscopy, microscopy, and other analytical methods that allow researchers to observe and characterize defects at the atomic level. The book discusses the challenges associated with measuring defects, the interpretation of experimental data, and the implications of these findings for the understanding of semiconductor behavior and device performance. The authors emphasize the importance of experimental validation of theoretical models discussed in Volume I.

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N° Bulletin Date / Année de parution Titre N° Spécial Sommaire
Cote Localisation Type de Support Type de Prêt Statut Date de Restitution Prévue Réservation
530 BOU 2T2 C1 BIB-Centrale / Ouvrages Papier interne disponible
Bourgoin, J. et al. (1983). Point defects in semiconductors V 2,experimental aspects . Heidelberg;