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Point defects in semiconductors V1, Theoretical aspects

Type doc. :

Livre

Langue :

Anglais

Auteur(s) :

Lannoo, Michel
Bourgoin, Jacques
Friedel, Jacques

Editeur(s) :

Heidelberg

Année d'édition :

1981

Sujet(s):
point defects
substitutional impurities

Thème :

Physique

ISBN :

0387105182
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This volume focuses on the theoretical aspects of point defects in semiconductors, which are essential for understanding the electronic properties and behavior of these materials. Point defects include vacancies, interstitials, and substitutional impurities, all of which can significantly influence the electrical, optical, and mechanical properties of semiconductors. The authors present various theoretical models and approaches to describe the formation, behavior, and interactions of these defects. They also discuss the implications of point defects for semiconductor device performance and reliability.

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N° Bulletin Date / Année de parution Titre N° Spécial Sommaire
Cote Localisation Type de Support Type de Prêt Statut Date de Restitution Prévue Réservation
530 BOU 1T1 C1 BIB-Centrale / Ouvrages Papier interne disponible
Lannoo, M. et al. (1981). Point defects in semiconductors V1, Theoretical aspects . Heidelberg;