The investigation of oxidation of evaporated copper film using TEH, RBS and NRA showed a great potential though the conditions of cleanliness during ion implantation had made it difficult to obtain accurate information on the b~haviour of oxygen in copper. Nuclear reaction techniques showed to be relatively accurate for the determination of oxygen and carbon in the near surface us:.ng the 01 & (d , p) 017 and C12(d,p)CI3 nuclear reactions respectively. Besides, the 016 (d ,~) N1 4 nuclear reaction showed to be reliable for the determination of oxygen profile in implanted copper films. However, the accuracy of this method with the reference standard is usually limited by the value of the stopping powers. As far as the growth of monocrystal th in film was concerned, the thermal annealing treatment was effective though a substrate of higher sublimation temperature and also a higher vacuum would give better results. The general conclusion from annealing studies with TEH was that the discontinuous rings disappeared indicating that the material regained rouch more of its crystalline character. There were,however, many residual defects in the layer such as 73. t f I Regarding the oxygen ion implantation, it showed it was higher vacuum Possible to obtain a thin layer of CU20 though the would enhance Use of a instance, as reported by Ruffel et al. the quality of oxidation. For chambers one (50); the Use of tWo of which was Used for argon and the other for pure oxygen. The region between the two chambers had a strong axial magnetic field to limit the plasma. In this way, ions could be extracted from the second oxygen-rich chamber while the lifetime of the filament was enhanced by is high current oxygen implantation i.e 200 MA. In addition, it operating in an argon atmosphere. This design had produced a advisable when working with the existing isotope separator to use the smallest aperture number and reducing the sweep to a Position when the uniformity of the beam is certain extent. acceptable and the reduction of the impurity is maximum to a Finally, copper films showed to be vulnerable to air exposure and to carbon stoichiometry of contamination. Therefore, the right CU20 could not be reached unless the conditions of cleanliness in which the whole process is undertaken are considerably ameliorated. oxygen behaviour in COpper In conclusion, the J i f I film is very complex though it when CU20 has been subject to many intensive investigations since 1916 ( cuprous oxide ) was known as a semiconductor.