MOS (metal oxide semiconductor) physics and technology
Type doc. :
Livre
Langue :
Anglais
Auteur(s) :
Editeur(s) :
Année d'édition :
1982
Thème :
Electronique
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Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology for controlling its properties. Emphasizes the silica and the silica-silicon interface. Provides a critical assessment of the literature, corrects incomplete or incorrect theoretical formulations, and gives critical comparisons of measurement methods. Contains information needed to grow an oxide, make an MOS capacitor array, and fabricate an integrated circuit with optimal performance and stability.
| N° Bulletin | Date / Année de parution | Titre N° Spécial | Sommaire |
|---|
| Cote | Localisation | Type de Support | Type de Prêt | Statut | Date de Restitution Prévue | Réservation |
|---|---|---|---|---|---|---|
| 621.381 NIC 1 C1 | BIB-Centrale / Ouvrages | Papier | interne | disponible | ||
| 621.381 NIC 1 C2 | BIB-Centrale / Ouvrages | Papier | interne | disponible |
Nicollian, E. & Brews, J. (1982). MOS (metal oxide semiconductor) physics and technology . John Wiley & Sons;