Novel refractory semiconductors

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The main focus was on novel refractory semiconductors that is, semiconductor materials capable of withstanding extreme temperatures or harsh environments, or containing elements and structures typically found in highly refractory compounds. The discussed topics included the growth, structural and electronic characterization, as well as the thermal and transport properties of these materials under severe conditions. Materials such as boron-rich carbides and nitrides, or semiconducting carbides (e.g., boron carbide), were highlighted—particularly for their unusual properties, such as an abnormally high Seebeck coefficient caused by polaron hopping between disordered sites. The symposium also served as a platform to discuss the **challenges and opportunities** of integrating such materials into electronic or optoelectronic devices designed to operate at high temperatures or in harsh environments. As a collective work, this volume provides a comprehensive overview—up to the year 1987—of the advances then underway in the field of unconventional semiconductors (beyond silicon or III–V materials), and it opens perspectives for future applications in extreme conditions

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