Diffusion of sulphur and silicon in aluminium gallium arsenide .
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It has been demonstrated that the diffusion of S can enhance the interdiffusion of group III atoms in GaAs-AIAs SLs. Experimental results have indicated that the extent of interdiffusion is very sensitive to the experimental conditions of the diffusion. The S diffusion mechanism proposed by Zahari and Tuck (1982) has been discussed and it has been concluded that it cannot account for the observed intermixing. A different diffusion mechanism involving both S ions and atoms has been proposed. If this mechanism is correct, this implies that two different diffusion mechanisms may be simultaneously operating one of them may generate group III interstitials and therefore induce intermixing. Other mechanisms capable of producing the supersaturation of group 111 point defects have been examined. The dependency of the As pressure on the amount of S added into the ampoule may ~ff
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| Cote | Localisation | Type de Support | Type de Prêt | Statut | Date de Restitution Prévue | Réservation |
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| 621.381 BAB TH C1 | BIB-Centrale / Thèses | interne | disponible |