Properties of silicon-on-insulator for bipolar integrated circuits .
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It has been demonstrated from the leakage current measurements that a dose of 1.8 x 1018 o+/cm2 achieves a good lectrical isolation in both vertical and horizontal directions. Breakdown fields associated with~out a 2500 i thick oxide layer in excess of 7 MV/cm have been measured. Such a high breakdown field permits the fabrication of high voltage circuits. Recombination lifetimes in the range 0.2-0.3 us have been obtained in silicon-on-insulator films. These values are relatively high compared to SOS technology, and are expected to improve significantly if an epitaxial lay.er is grown. Thus, SOI structures created by high-dose oxygen implantation should be able to support bipolar circuits. It also been shown that the variation of the has electrical resistivity of the SOI films with arsenic implant dose is similar to that in bulk silicon. Minority and majority carrier mobilities are marginally degraded. The electrical profiles of ion-implanted SOI films are comparable with that of bulk silicon. AIl these electrical . measurements carried out during the course of this work show that the implanted SOI structure has potential for device fabrication. 6.2 ~!!ture ~ It is expected that the high quality of the uppermost part of the SOI structure could be further improved by the growth of an epitaxial layer. Therefore, it would be"interesting to investigate the following topics: i) A study of the crystallinity of epitaxial silicon layers grown on SOI films. ii) Measurement of lifetimes in epitaxial layers grown on SOI films. iii) Fabrication of vertical diodes for easurement of lifetime, leakage current and switching time.
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| Cote | Localisation | Type de Support | Type de Prêt | Statut | Date de Restitution Prévue | Réservation |
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| 621.381 BEL TH C1 | BIB-Centrale / Thèses | interne | disponible |